c b e sot23 pnp silicon planar high gain medium power transistor issue 1 C december 1997 features very low equivalent on-resistance; r ce(sat) =160m w at 1.25a complementary type C fmmtl617 partmarking detail C l77 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -12 v collector-emitter voltage v ceo -12 v emitter-base voltage v ebo -5 v continuous collector current i c -1.25 a peak pulse current i cm -4 a base current i b -200 ma power dissipation at t amb =25c p tot -500 mw operating and storage temperature range t j :t stg -55 to +150 c FMMTL717
electrical characteristics (at t amb = 25c). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -12 -35 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -12 -25 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 -8.5 v i e =-100 m a collector cut-off current i cbo -10 na v cb =-10v emitter cut-off current i ebo -10 na v eb =-4v collector cut-off current i ces -10 na v ce =-10v collector-emitter saturation voltage v ce(sat) -24 -94 -160 -200 -40 -140 -240 -290 mv mv mv mv i c =-100ma, i b =-10ma* i c =-500ma, i b =-20ma* i c =-1a, i b =-50ma* i c =-1.25a,i b =-50ma base-emitter saturation voltage v be(sat) -970 -1100 mv i c =-1.25a, i b =-50ma* base-emitter turn on voltage v be(on) -875 -1000 mv i c =-1.25a, v ce =-2v* static forward current transfer ratio h fe 300 300 180 100 50 490 450 275 180 110 i c =-10ma, v ce =-2v i c =-100ma, v ce =-2v* i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* i c =-3a, v ce =-2v* transition frequency f t 205 mhz i c =-50ma, v ce =-10v f=100mhz collector-base breakdown voltage c obo 15 20 pf v cb =-10v, f=1mhz switching times t on t off 76 149 ns ns i c =-1a, v cc =-10v i b1 =i b2 =-10ma *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% FMMTL717
FMMTL717 1m 10 1m 100m 10 1m 100m 10 0.1 10 100m 1m 1m 100m 10 i c - collector current (a) v ce(sat) v i c 0 0.5 v ce(sat) - (v) ic/ib=10 ic/ib=20 ic/ib=50 +25c -55c h fe - typical gain +100c 0 i c - collector current (a) h fe v i c +25c +100c v be(on) - (v) -55c 0 i c - collector current (a) v be(on) v i c +100c +150c v ce(sat) - (v) +25c 0 i c - collector current (a) v ce(sat) v i c +100c +150c v be(sat) - (v) +25c 0 i c - collector current (a) v be(sat) v i c 1s 100ms ic - collector current (a) dc 10m vce - collector emitter voltage (v) safe operating area 10ms 1ms 100 m s +150c vce=2v +25c -55c ic/ib=10 vce=2v -55c ic/ib=10 10m 100m 1 0.1 0.2 0.3 0.4 0.1 0.2 0.3 0.4 0.5 10m 1 10m 1 400 800 10m 1 0.4 0.8 1.2 10m 1 0.4 0.8 1.2 1.6 110100 100m 1 10 typical characteristics
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